KT326BM Datasheet and Replacement

   Type Designator: KT326BM
   SMD Transistor Code: КТ326БМ
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
     - BJT ⓘ Cross-Reference Search