KT339B Datasheet and Replacement

   Type Designator: KT339B
   SMD Transistor Code: КТ339Б
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.26 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
     - BJT ⓘ Cross-Reference Search