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KT339D Specs and Replacement


   Type Designator: KT339D
   SMD Transistor Code: КТ339Д
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.26 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.025 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
 

 KT339D Substitution

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KT339D detailed specifications

 9.1. Size:355K  russia
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KT339D

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Detailed specifications: KT336V , KT337A , KT337B , KT337V , KT339A , KT339AM , KT339B , KT339BM , MJE340 , KT339DM , KT339G , KT339GM , KT339V , KT339VM , KT340A , KT340B , KT340D .

Keywords - KT339D transistor specs

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