KT339D Datasheet, Equivalent, Cross Reference Search

Type Designator: KT339D

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.26 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

KT339D Datasheet (PDF)

9.1. kt339a.pdf Size:355K _russia