KT357V Specs and Replacement
Type Designator: KT357V
SMD Transistor Code: КТ357В
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 0.04 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
KT357V Substitution
- BJT ⓘ Cross-Reference Search
KT357V datasheet
Detailed specifications: KT351B, KT352A, KT352B, KT355A, KT355AM, KT357A, KT357B, KT357G, 2N2907, KT358A, KT358B, KT358V, KT359A-3, KT359B-3, KT359V-3, KT361A, KT361A1
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