KT358B Specs and Replacement
Type Designator: KT358B
SMD Transistor Code: КТ358Б
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
KT358B Substitution
- BJT ⓘ Cross-Reference Search
KT358B datasheet
Detailed specifications: KT352B, KT355A, KT355AM, KT357A, KT357B, KT357G, KT357V, KT358A, 2SC828, KT358V, KT359A-3, KT359B-3, KT359V-3, KT361A, KT361A1, KT361A2, KT361A3
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