All Transistors. KT501E Datasheet

 

KT501E Datasheet and Replacement


   Type Designator: KT501E
   SMD Transistor Code: КТ501Е
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
 

 KT501E Substitution

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KT501E Datasheet (PDF)

 9.1. Size:627K  russia
 kt501a-b-v-g-d-e-zh-i-k-l-m.pdf pdf_icon

KT501E

Datasheet: KT391B-2 , KT391V-2 , KT396A-9 , KT399A , KT399AM , KT501A , KT501B , KT501D , 2SB817 , KT501G , KT501I , KT501J , KT501K , KT501L , KT501M , KT501V , KT502A .

History: KRC884T | STC5085

Keywords - KT501E transistor datasheet

 KT501E cross reference
 KT501E equivalent finder
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