KT501E Specs and Replacement

Type Designator: KT501E

SMD Transistor Code: КТ501Е

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

 KT501E Substitution

- BJT ⓘ Cross-Reference Search

 

KT501E datasheet

 9.1. Size:627K  russia

 kt501a-b-v-g-d-e-zh-i-k-l-m.pdf pdf_icon

KT501E

... See More ⇒

Detailed specifications: KT391B-2, KT391V-2, KT396A-9, KT399A, KT399AM, KT501A, KT501B, KT501D, S9013, KT501G, KT501I, KT501J, KT501K, KT501L, KT501M, KT501V, KT502A

Keywords - KT501E pdf specs

 KT501E cross reference

 KT501E equivalent finder

 KT501E pdf lookup

 KT501E substitution

 KT501E replacement