KT501J Specs and Replacement

Type Designator: KT501J

SMD Transistor Code: КТ501Ж

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

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KT501J datasheet

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KT501J

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Detailed specifications: KT399A, KT399AM, KT501A, KT501B, KT501D, KT501E, KT501G, KT501I, 13005, KT501K, KT501L, KT501M, KT501V, KT502A, KT502B, KT502D, KT502E

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