All Transistors. KT501M Datasheet

 

KT501M Datasheet and Replacement


   Type Designator: KT501M
   SMD Transistor Code: КТ501М
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
 

 KT501M Substitution

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KT501M Datasheet (PDF)

 9.1. Size:627K  russia
 kt501a-b-v-g-d-e-zh-i-k-l-m.pdf pdf_icon

KT501M

Datasheet: KT501B , KT501D , KT501E , KT501G , KT501I , KT501J , KT501K , KT501L , SS8050 , KT501V , KT502A , KT502B , KT502D , KT502E , KT502G , KT502V , KT503A .

History: ECG182 | ERS140 | MUN2131T1G

Keywords - KT501M transistor datasheet

 KT501M cross reference
 KT501M equivalent finder
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