KT501M Specs and Replacement

Type Designator: KT501M

SMD Transistor Code: КТ501М

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

 KT501M Substitution

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KT501M datasheet

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KT501M

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Detailed specifications: KT501B, KT501D, KT501E, KT501G, KT501I, KT501J, KT501K, KT501L, 2222A, KT501V, KT502A, KT502B, KT502D, KT502E, KT502G, KT502V, KT503A

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