All Transistors. KT501M Datasheet

 

KT501M Datasheet and Replacement


   Type Designator: KT501M
   SMD Transistor Code: КТ501М
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.35 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
      - BJT Cross-Reference Search

   

KT501M Datasheet (PDF)

 9.1. Size:627K  russia
 kt501a-b-v-g-d-e-zh-i-k-l-m.pdf pdf_icon

KT501M

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N4955-78 | D60T6050 | 2SC4522 | 2SC482Y | KSC5025R | 2SB67 | RN4989

Keywords - KT501M transistor datasheet

 KT501M cross reference
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