KT502G PDF and Equivalents Search

KT502G Specs and Replacement

Type Designator: KT502G

SMD Transistor Code: КТ502Г

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

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KT502G datasheet

Detailed specifications: KT501K, KT501L, KT501M, KT501V, KT502A, KT502B, KT502D, KT502E, BC549, KT502V, KT503A, KT503B, KT503D, KT503E, KT503G, KT503V, KT504A

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