KT502V Specs and Replacement
Type Designator: KT502V
SMD Transistor Code: КТ502В
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 20 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
KT502V Substitution
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KT502V datasheet
Detailed specifications: KT501L, KT501M, KT501V, KT502A, KT502B, KT502D, KT502E, KT502G, 2SC2240, KT503A, KT503B, KT503D, KT503E, KT503G, KT503V, KT504A, KT504B
Keywords - KT502V pdf specs
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