KT503E PDF and Equivalents Search

KT503E Specs and Replacement

Type Designator: KT503E

SMD Transistor Code: КТ503Е

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

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KT503E datasheet

Detailed specifications: KT502B, KT502D, KT502E, KT502G, KT502V, KT503A, KT503B, KT503D, 2SD669, KT503G, KT503V, KT504A, KT504B, KT504V, KT505A, KT505B, KT506A

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