KT506B PDF and Equivalents Search

KT506B Specs and Replacement

Type Designator: KT506B

SMD Transistor Code: КТ506Б

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

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KT506B datasheet

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Detailed specifications: KT503G, KT503V, KT504A, KT504B, KT504V, KT505A, KT505B, KT506A, TIP32C, KT509A, KT601A, KT601AM, KT602A, KT602AM, KT602B, KT602BM, KT602G

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