KT602BM Specs and Replacement
Type Designator: KT602BM
SMD Transistor Code: КТ602БМ
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.075 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
KT602BM Substitution
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KT602BM datasheet
Detailed specifications: KT506A, KT506B, KT509A, KT601A, KT601AM, KT602A, KT602AM, KT602B, D667, KT602G, KT602V, KT603A, KT603B, KT603D, KT603E, KT603G, KT603I
Keywords - KT602BM pdf specs
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