KT603E Specs and Replacement
Type Designator: KT603E
SMD Transistor Code: КТ603Е
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
KT603E Substitution
- BJT ⓘ Cross-Reference Search
KT603E datasheet
Detailed specifications: KT602AM, KT602B, KT602BM, KT602G, KT602V, KT603A, KT603B, KT603D, TIP41C, KT603G, KT603I, KT603V, KT604A, KT604AM, KT604B, KT604BM, KT605A
Keywords - KT603E pdf specs
KT603E cross reference
KT603E equivalent finder
KT603E pdf lookup
KT603E substitution
KT603E replacement
