2N4072 Specs and Replacement
Type Designator: 2N4072
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 275 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO18
2N4072 Substitution
- BJT ⓘ Cross-Reference Search
2N4072 datasheet
isc Silicon NPN Power Transistor 2N4070 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
Detailed specifications: 2N4062, 2N4063, 2N4064, 2N4068, 2N4069, 2N407, 2N4070, 2N4071, C1815, 2N4073, 2N4074, 2N4075, 2N4076, 2N4077, 2N4078, 2N408, 2N4080
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