2N4073 Datasheet and Replacement
Type Designator: 2N4073
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 275 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO5
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2N4073 Datasheet (PDF)
2n4070.pdf

isc Silicon NPN Power Transistor 2N4070DESCRIPTIONExcellent Safe Operating AreaLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general-purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BC847RA | 2N2874 | 2SB744A | 2N332A | MMBT3906HE3 | BDW24 | NB211HY
Keywords - 2N4073 transistor datasheet
2N4073 cross reference
2N4073 equivalent finder
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History: BC847RA | 2N2874 | 2SB744A | 2N332A | MMBT3906HE3 | BDW24 | NB211HY



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