KT8116V Specs and Replacement

Type Designator: KT8116V

SMD Transistor Code: КТ8116В

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

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KT8116V datasheet

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Detailed specifications: KT8112A, KT8114A, KT8114B, KT8115A, KT8115B, KT8115V, KT8116A, KT8116B, BD333, KT8117A, KT8117B, KT8118A, KT8120A, KT8121A, KT8121A-1, KT8121A-2, KT8121B

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