KT812A Specs and Replacement
Type Designator: KT812A
SMD Transistor Code: КТ812А
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 4
Noise Figure, dB: -
KT812A Substitution
- BJT ⓘ Cross-Reference Search
KT812A datasheet
Detailed specifications: KT8126A, KT8127A, KT8127A-1, KT8127B, KT8127B-1, KT8127V, KT8127V-1, KT8129A, BC557, KT812B, KT812V, KT8130A, KT8130B, KT8130V, KT8131A, KT8131B, KT8131V
Keywords - KT812A pdf specs
KT812A cross reference
KT812A equivalent finder
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