KT812V Specs and Replacement

Type Designator: KT812V

SMD Transistor Code: КТ812В

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 100 pF

Forward Current Transfer Ratio (hFE), MIN: 4

Noise Figure, dB: -

 KT812V Substitution

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KT812V datasheet

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KT812V

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Detailed specifications: KT8127A-1, KT8127B, KT8127B-1, KT8127V, KT8127V-1, KT8129A, KT812A, KT812B, 13009, KT8130A, KT8130B, KT8130V, KT8131A, KT8131B, KT8131V, KT8136A, KT8136A-1

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