KT8130V Specs and Replacement

Type Designator: KT8130V

SMD Transistor Code: КТ8130В

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 25 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

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KT8130V datasheet

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Detailed specifications: KT8127V, KT8127V-1, KT8129A, KT812A, KT812B, KT812V, KT8130A, KT8130B, TIP31C, KT8131A, KT8131B, KT8131V, KT8136A, KT8136A-1, KT8137A, KT8138A, KT8138B

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