KT8155B Specs and Replacement

Type Designator: KT8155B

SMD Transistor Code: КТ8155Б

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

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KT8155B datasheet

 9.1. Size:696K  russia

 kt815a-b-v-g.pdf pdf_icon

KT8155B

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 9.2. Size:211K  inchange semiconductor

 kt815a.pdf pdf_icon

KT8155B

isc Silicon NPN Power Transistor KT815A DESCRIPTION High Collector Current-I = 1.5A C High Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

Detailed specifications: KT814G, KT814V, KT8150A, KT8150A-1, KT8150A-2, KT8154A, KT8154B, KT8155A, TIP32C, KT8156A, KT8156B, KT8157A, KT8157B, KT8158A, KT8158B, KT8158V, KT8159A

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