KT8156B Datasheet, Equivalent, Cross Reference Search
Type Designator: KT8156B
SMD Transistor Code: КТ8156Б
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 330 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
KT8156B Transistor Equivalent Substitute - Cross-Reference Search
KT8156B Datasheet (PDF)
kt815a.pdf
isc Silicon NPN Power Transistor KT815ADESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SB1203T-TL-H | BCPA14
History: 2SB1203T-TL-H | BCPA14
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