KT8157A Specs and Replacement

Type Designator: KT8157A

SMD Transistor Code: КТ8157А

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

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KT8157A datasheet

 9.1. Size:696K  russia

 kt815a-b-v-g.pdf pdf_icon

KT8157A

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 9.2. Size:211K  inchange semiconductor

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KT8157A

isc Silicon NPN Power Transistor KT815A DESCRIPTION High Collector Current-I = 1.5A C High Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

Detailed specifications: KT8150A-1, KT8150A-2, KT8154A, KT8154B, KT8155A, KT8155B, KT8156A, KT8156B, BD136, KT8157B, KT8158A, KT8158B, KT8158V, KT8159A, KT8159B, KT8159V, KT815A

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