All Transistors. KT8158B Datasheet

 

KT8158B Datasheet, Equivalent, Cross Reference Search


   Type Designator: KT8158B
   SMD Transistor Code: КТ8158Б
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2500
   Noise Figure, dB: -

 KT8158B Transistor Equivalent Substitute - Cross-Reference Search

   

KT8158B Datasheet (PDF)

 9.1. Size:696K  russia
 kt815a-b-v-g.pdf

KT8158B

 9.2. Size:211K  inchange semiconductor
 kt815a.pdf

KT8158B KT8158B

isc Silicon NPN Power Transistor KT815ADESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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