All Transistors. KT8159V Datasheet

 

KT8159V Datasheet and Replacement


   Type Designator: KT8159V
   SMD Transistor Code: КТ8159В
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2500
   Noise Figure, dB: -
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KT8159V Datasheet (PDF)

 9.1. Size:696K  russia
 kt815a-b-v-g.pdf pdf_icon

KT8159V

 9.2. Size:211K  inchange semiconductor
 kt815a.pdf pdf_icon

KT8159V

isc Silicon NPN Power Transistor KT815ADESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: RN1909 | BC290C | MQ5447 | C63 | STN9260 | NTE2547 | 50C02MH

Keywords - KT8159V transistor datasheet

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