KT815A Specs and Replacement

Type Designator: KT815A

SMD Transistor Code: КТ815А

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Collector Capacitance (Cc): 60 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

 KT815A Substitution

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KT815A datasheet

 ..1. Size:211K  inchange semiconductor

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KT815A

isc Silicon NPN Power Transistor KT815A DESCRIPTION High Collector Current-I = 1.5A C High Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

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KT815A

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Detailed specifications: KT8157A, KT8157B, KT8158A, KT8158B, KT8158V, KT8159A, KT8159B, KT8159V, BC547, KT815B, KT815G, KT815V, KT8164A, KT8164B, KT816A, KT816A-2, KT816B

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