KT816V Specs and Replacement
Type Designator: KT816V
SMD Transistor Code: КТ816В
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
KT816V Substitution
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KT816V datasheet
Detailed specifications: KT815G, KT815V, KT8164A, KT8164B, KT816A, KT816A-2, KT816B, KT816G, 2N3055, 2SB647-D, KT8175A, KT8175A-1, KT8175B, KT8175B-1, KT8176A, KT8176B, KT8176V
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