KT8175A Specs and Replacement

Type Designator: KT8175A

SMD Transistor Code: КТ8175А

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

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KT8175A datasheet

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KT8175A

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Detailed specifications: KT8164A, KT8164B, KT816A, KT816A-2, KT816B, KT816G, KT816V, 2SB647-D, TIP41, KT8175A-1, KT8175B, KT8175B-1, KT8176A, KT8176B, KT8176V, KT8177A, KT8177B

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