KT8175B Specs and Replacement
Type Designator: KT8175B
SMD Transistor Code: КТ8175Б
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
KT8175B Substitution
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KT8175B datasheet
Detailed specifications: KT816A, KT816A-2, KT816B, KT816G, KT816V, 2SB647-D, KT8175A, KT8175A-1, BC337, KT8175B-1, KT8176A, KT8176B, KT8176V, KT8177A, KT8177B, KT8177V, KT817A
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