KT8176B Specs and Replacement

Type Designator: KT8176B

SMD Transistor Code: КТ8176Б

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

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KT8176B datasheet

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KT8176B

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Detailed specifications: KT816G, KT816V, 2SB647-D, KT8175A, KT8175A-1, KT8175B, KT8175B-1, KT8176A, TIP122, KT8176V, KT8177A, KT8177B, KT8177V, KT817A, KT817B, KT817B2, KT817G

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