KT8181B Specs and Replacement

Type Designator: KT8181B

SMD Transistor Code: КТ8181Б

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

 KT8181B Substitution

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KT8181B datasheet

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KT8181B

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Detailed specifications: KT8177V, KT817A, KT817B, KT817B2, KT817G, KT817G2, KT817V, KT8181A, 2N2222A, KT8182A, KT8182B, KT8183A, KT8183A-1, KT8183A-2, KT8183B, KT8183B-1, KT8183B-2

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