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KT819BM Specs and Replacement


   Type Designator: KT819BM
   SMD Transistor Code: КТ819БМ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -

 KT819BM Transistor Equivalent Substitute - Cross-Reference Search

   

KT819BM detailed specifications

 9.1. Size:1253K  russia
 kt819a-b-v-g-am-bm-vm-gm 2t819a-b-v.pdf pdf_icon

KT819BM

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Detailed specifications: KT818V , KT818V-1 , KT818VM , KT819A , KT819A-1 , KT819AM , KT819B , KT819B-1 , SS8050 , KT819G , KT819G-1 , KT819GM , KT819V , KT819V-1 , KT819VM , KT825D , KT825E .

History: AC598

Keywords - KT819BM transistor specs

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