KT819G Specs and Replacement

Type Designator: KT819G

SMD Transistor Code: КТ819Г

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

 KT819G Substitution

- BJT ⓘ Cross-Reference Search

 

KT819G datasheet

 9.1. Size:1253K  russia

 kt819a-b-v-g-am-bm-vm-gm 2t819a-b-v.pdf pdf_icon

KT819G

... See More ⇒

Detailed specifications: KT818V-1, KT818VM, KT819A, KT819A-1, KT819AM, KT819B, KT819B-1, KT819BM, 8550, KT819G-1, KT819GM, KT819V, KT819V-1, KT819VM, KT825D, KT825E, KT825G

Keywords - KT819G pdf specs

 KT819G cross reference

 KT819G equivalent finder

 KT819G pdf lookup

 KT819G substitution

 KT819G replacement