KT819G-1 Specs and Replacement

Type Designator: KT819G-1

SMD Transistor Code: КТ819Г-1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 90 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

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KT819G-1 datasheet

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KT819G-1

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Detailed specifications: KT818VM, KT819A, KT819A-1, KT819AM, KT819B, KT819B-1, KT819BM, KT819G, 9014, KT819GM, KT819V, KT819V-1, KT819VM, KT825D, KT825E, KT825G, KT826A

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