KT819V Specs and Replacement

Type Designator: KT819V

SMD Transistor Code: КТ819В

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

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KT819V datasheet

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 kt819a-b-v-g-am-bm-vm-gm 2t819a-b-v.pdf pdf_icon

KT819V

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Detailed specifications: KT819A-1, KT819AM, KT819B, KT819B-1, KT819BM, KT819G, KT819G-1, KT819GM, C3198, KT819V-1, KT819VM, KT825D, KT825E, KT825G, KT826A, KT826B, KT826V

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