KT829G Specs and Replacement
Type Designator: KT829G
SMD Transistor Code: КТ829Г
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 750
Noise Figure, dB: -
KT829G Substitution
- BJT ⓘ Cross-Reference Search
KT829G datasheet
n-p-n, 829 Ik max,A 8 Uo (U max)[Ur max],B100 U max,B 100 P max(P max), 60 T max,C 150 h21(h21)[S21 ] 750 U(U),B 3 I(I),A 3 U ,B 2 I(IR), 1500 f(fh21), 4 R -(R -),/ 2.08 ... See More ⇒
isc Silicon NPN Darlington Power Transistor KT829A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE... See More ⇒
Detailed specifications: KT827B, KT827V, KT828A, KT828B, KT828G, KT828V, KT829A, KT829B, 2SA1015, KT829V, KT830, KT830A, KT830G, KT830V, KT834A, KT834B, KT834V
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