All Transistors. KT829G Datasheet

 

KT829G Datasheet and Replacement


   Type Designator: KT829G
   SMD Transistor Code: КТ829Г
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
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KT829G Datasheet (PDF)

 9.1. Size:33K  no
 kt829a.pdf pdf_icon

KT829G

n-p-n, 829Ik max,A 8Uo (U max)[Ur max],B100U max,B 100P max(P max), 60T max,C 150h21(h21)[S21 ] 750 U(U),B 3 I(I),A 3U ,B 2I(IR), 1500f(fh21), 4R -(R -),/ 2.08

 9.2. Size:713K  russia
 kt829a-b-v-g.pdf pdf_icon

KT829G

 9.3. Size:213K  inchange semiconductor
 kt829a.pdf pdf_icon

KT829G

isc Silicon NPN Darlington Power Transistor KT829ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull outputstage applicationsABSOLUTE

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC3712 | 2SA1407E | NB221YX | 2SA1262 | 2SB939A | 2N2872 | T11

Keywords - KT829G transistor datasheet

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