KT837B Specs and Replacement
Type Designator: KT837B
SMD Transistor Code: КТ837Б
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
KT837B Substitution
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KT837B datasheet
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Detailed specifications: KT830G, KT830V, KT834A, KT834B, KT834V, KT835A, KT835B, KT837A, TIP32C, KT837C, KT837D, KT837E, KT837F, KT837G, KT837H, KT837I, KT837J
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