KT837D Specs and Replacement

Type Designator: KT837D

SMD Transistor Code: КТ837Д

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 7.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

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KT837D datasheet

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Detailed specifications: KT834A, KT834B, KT834V, KT835A, KT835B, KT837A, KT837B, KT837C, D882P, KT837E, KT837F, KT837G, KT837H, KT837I, KT837J, KT837K, KT837L

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