KT850B Specs and Replacement
Type Designator: KT850B
SMD Transistor Code: КТ850Б
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
KT850B Substitution
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KT850B datasheet
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Detailed specifications: KT845A, KT846A, KT846B, KT846V, KT847A, KT847B, KT848A, KT850A, 2SD718, KT850V, KT851A, KT851B, KT851V, KT852A, KT852B, KT852G, KT852V
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