KT855A Specs and Replacement
Type Designator: KT855A
SMD Transistor Code: КТ855А
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
KT855A Substitution
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KT855A datasheet
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Detailed specifications: KT852G, KT852V, KT853A, KT853B, KT853G, KT853V, KT854A, KT854B, BC546, KT855B, KT855V, KT856A, KT856A-1, KT856B, KT856B-1, KT857A, KT858A
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