KT855B Specs and Replacement

Type Designator: KT855B

SMD Transistor Code: КТ855Б

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

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KT855B datasheet

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Detailed specifications: KT852V, KT853A, KT853B, KT853G, KT853V, KT854A, KT854B, KT855A, TIP35C, KT855V, KT856A, KT856A-1, KT856B, KT856B-1, KT857A, KT858A, KT859A

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