KT856B Specs and Replacement
Type Designator: KT856B
SMD Transistor Code: КТ856Б
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
KT856B Substitution
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KT856B datasheet
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Detailed specifications: KT853V, KT854A, KT854B, KT855A, KT855B, KT855V, KT856A, KT856A-1, TIP31, KT856B-1, KT857A, KT858A, KT859A, KT863A, KT864A, KT865A, KT868A
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