KT875A Specs and Replacement
Type Designator: KT875A
SMD Transistor Code: КТ875А
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 910 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
KT875A Substitution
- BJT ⓘ Cross-Reference Search
KT875A datasheet
NO PDF data!
Detailed specifications: KT859A, KT863A, KT864A, KT865A, KT868A, KT868B, KT872A, KT872B, 2SB817, KT875B, KT875G, KT875V, KT876A, KT876B, KT876G, KT876V, KT877A
Keywords - KT875A pdf specs
KT875A cross reference
KT875A equivalent finder
KT875A pdf lookup
KT875A substitution
KT875A replacement
