KT875B Specs and Replacement

Type Designator: KT875B

SMD Transistor Code: КТ875Б

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 70 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Collector Capacitance (Cc): 910 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

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KT875B datasheet

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Detailed specifications: KT863A, KT864A, KT865A, KT868A, KT868B, KT872A, KT872B, KT875A, S9013, KT875G, KT875V, KT876A, KT876B, KT876G, KT876V, KT877A, KT877B

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