2N4127 Specs and Replacement
Type Designator: 2N4127
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO128
- BJT ⓘ Cross-Reference Search
2N4127 datasheet
9.2. Size:165K motorola
2n4125 2n4126.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4125/D Amplifier Transistors PNP Silicon 2N4125 2N4126 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N4125 2N4126 Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 30 25 Vdc Collector Base Voltage VCBO 30 25 Vdc Emitter Base Voltage VEBO 4.0 Vdc Collector... See More ⇒
9.3. Size:162K motorola
2n4123 2n4124.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4123/D General Purpose Transistors NPN Silicon 2N4123 2N4124 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol 2N4123 2N4124 Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 30 25 Vdc Collector Base Voltage VCBO 40 30 Vdc Emitter Base Voltage VEBO 5.0 Vdc Col... See More ⇒
9.4. Size:48K philips
2n4126 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4126 PNP general purpose transistor 1997 Mar 25 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor 2N4126 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 25 V). 1... See More ⇒
9.5. Size:48K philips
2n4124 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4124 NPN general purpose transistor 1997 Mar 25 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N4124 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 25 V). 1... See More ⇒
9.6. Size:61K fairchild semi
2n4125.pdf
2N4125 C TO-92 B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents of 10 A to 100 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector Cur... See More ⇒
9.7. Size:95K fairchild semi
2n4124 mmbt4124.pdf
2N4124 MMBT4124 C E TO-92 C B B SOT-23 E Mark ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Vo... See More ⇒
9.8. Size:83K fairchild semi
2n4123.pdf
[]]]]]]]]]]]]]]] []]]]]]]]]]]]]] 2N4123 C TO-92 B E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V V Collector-Base Voltage 40 V CBO VEBO Emitter-Base Voltage ... See More ⇒
9.9. Size:81K fairchild semi
2n4126 mmbt4126.pdf
2N4126 MMBT4126 C E C TO-92 B B SOT-23 E Mark ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch- ing applications at collector currents to 10 A as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base... See More ⇒
9.11. Size:115K onsemi
2n4124g.pdf
2N4123, 2N4124 General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 2N4123 30 2N4124 25 1 EMITTER Collector-Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc TO... See More ⇒
9.12. Size:115K onsemi
2n4123 2n4124.pdf
2N4123, 2N4124 General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 2N4123 30 2N4124 25 1 EMITTER Collector-Base Voltage VCBO Vdc 2N4123 40 2N4124 30 Emitter-Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 200 mAdc TO... See More ⇒
9.13. Size:78K secos
2n4124.pdf
2N4124 0.2 A, 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High DC Current Gain High Transition Frequency G H Emitter Base Collector J A D B Collector Millimeter REF. Min. Max. K A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.... See More ⇒
9.14. Size:109K secos
2n4126.pdf
2N4126 -0.2 A, -25 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. Complementary of the 2N4124 G H Emitter Base Collector J A D Millimeter REF. B Min. Max. Collecto... See More ⇒
Detailed specifications: 2N4116, 2N412, 2N4121, 2N4122, 2N4123, 2N4124, 2N4125, 2N4126, 2SA1837, 2N4128, 2N413, 2N4130, 2N4131, 2N4132, 2N4133, 2N4134, 2N4135
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