KT876B Specs and Replacement
Type Designator: KT876B
SMD Transistor Code: КТ876Б
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 910 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
KT876B Substitution
- BJT ⓘ Cross-Reference Search
KT876B datasheet
NO PDF data!
Detailed specifications: KT868B, KT872A, KT872B, KT875A, KT875B, KT875G, KT875V, KT876A, D209L, KT876G, KT876V, KT877A, KT877B, KT877V, KT878A, KT878B, KT879A
Keywords - KT876B pdf specs
KT876B cross reference
KT876B equivalent finder
KT876B pdf lookup
KT876B substitution
KT876B replacement
