KT876B Datasheet and Replacement

   Type Designator: KT876B
   SMD Transistor Code: КТ876Б
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 910 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
     - BJT ⓘ Cross-Reference Search