KT876G Specs and Replacement
Type Designator: KT876G
SMD Transistor Code: КТ876Г
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 910 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
KT876G Substitution
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KT876G datasheet
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Detailed specifications: KT872A, KT872B, KT875A, KT875B, KT875G, KT875V, KT876A, KT876B, 2N4401, KT876V, KT877A, KT877B, KT877V, KT878A, KT878B, KT879A, KT879B
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