KT877V Specs and Replacement
Type Designator: KT877V
SMD Transistor Code: КТ877В
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 830 pF
Forward Current Transfer Ratio (hFE), MIN: 10000
Noise Figure, dB: -
KT877V Substitution
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KT877V datasheet
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Detailed specifications: KT875G, KT875V, KT876A, KT876B, KT876G, KT876V, KT877A, KT877B, D965, KT878A, KT878B, KT879A, KT879B, KT880A, KT880B, KT880G, KT880V
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