KT881G Specs and Replacement
Type Designator: KT881G
SMD Transistor Code: КТ881Г
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 4.5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
KT881G Substitution
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KT881G datasheet
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Detailed specifications: KT879A, KT879B, KT880A, KT880B, KT880G, KT880V, KT881A, KT881B, TIP142, KT881V, KT885A, KT885B, KT887A, KT887B, KT888A, KT888B, KT890A
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