KT881V Specs and Replacement

Type Designator: KT881V

SMD Transistor Code: КТ881В

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4.5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 200 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

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KT881V datasheet

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Detailed specifications: KT879B, KT880A, KT880B, KT880G, KT880V, KT881A, KT881B, KT881G, 2N2907, KT885A, KT885B, KT887A, KT887B, KT888A, KT888B, KT890A, KT890B

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